View gt50j341 detailed specification:
GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 GT50J341 GT50J341 GT50J341 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching tf = 0.15 s (typ.) (IC = 50 A) (4) Low saturation voltage VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1 Gate 2 Collector 3 Emitter TO-3P(N) 2011-06-08 1 Rev.2.0 GT50J341 4. Absolute Maximum Ratings (Note) (Ta = 25 , unless otherwise specified) 4. Absolute Maximum Ra... See More ⇒
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gt50j341.pdf Design, MOSFET, Power
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