View tpcm8001-h detailed specification:
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 6.0 nC (typ.) A Low drain-source ON-resistance RDS (ON) = 7 m (typ.) 3.5 0.2 High forward transfer admittance Yfs =36 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) 0.05 S S Enhancement mode Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 1 4 2.75 0.2 Absolute Maximum Ratings (Ta = 25 C) 0.8 0.1 8 5 1,2,3 SOURCE 4 GATE Characteristic Symbol Rating Unit 5,6,7,8 DRAIN Drain-source voltage VDSS 30 V JEDEC Drain-gate v... See More ⇒
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tpcm8001-h.pdf Design, MOSFET, Power
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