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View tpcm8004-h detailed specification:

TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 5.0 nC (typ.) A Low drain-source ON-resistance RDS (ON) = 7.3 m (typ.) 3.5 0.2 High forward transfer admittance Yfs = 60 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) 0.05 S S Enhancement mode Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) 1 4 Absolute Maximum Ratings (Ta = 25 C) 2.75 0.2 0.8 0.1 Characteristic Symbol Rating Unit 8 5 Drain-source voltage VDSS 30 V 1, 2, 3 SOURCE 4 GATE 5, 6, 7, 8 DRAIN Drain-gate voltage (RGS = 20 k ) VD... See More ⇒

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