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TSA23N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. 23A,500V,Max.RDS(on)=0.26 @ VGS =10V This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand high energy pulse in the Fast switching avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, 100% avalanche tested active power factor correction based on half bridge Improved dv/dt capability topology. Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 V TC = 25 23 A ID Drain Current TC = 100 15 A ... See More ⇒

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