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View 8205a detailed specification:

8205a8205a

R UMW UMW 8205A UMW 8205A Dual N-Channel Enhancement Mode MOSFET APPLIACTION FEATURES Portable Equipment 20V 5A N-channel Trench Mosfet Battery Powered System RDSON 27m @Vgs=4.5V, Id=5A RDSON 36m @Vgs=2.5V, Id=3A Low gate Charge Fast switching capability High reliability and rugged SYMBOL ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 12 V Continuous ID 5 A Drain Current(Note1) Pulsed IDM 20 A TA=25 C 0.83 Power Dissipation (TA=25 C) (Note 2) PD TA=100 C 0.3 W Thermal Resistance-Junction to Ambient R JA 150 C/W Maximum Junction Temperature TJ 150 C Storage Temperature Range TSTG -55 to 150 C Note 1. Pulse Test Pulse width 300 s, Duty cycle 2% 2. Pulse width limited by TJ(MAX) ELECTRICAL CHARACTERISTICS TJ=25 ,unless otherwise Note... See More ⇒

 

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