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View bss138 detailed specification:

R UMWType UMW BSS138 UMW BSS138 UMW BSS138 SMD N-Channel MOSFET Features VDS (V) = 50V SOT 23 ID = 300 mA (VGS = 10V) RDS(ON) 2.5 (VGS = 10V) RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating 1.5KV HBM 1. GATE MARKING 2. SOURCE 3. DRAIN S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 V Drain-Gate Voltage RGS 20K VDG 50 Gate-Source Voltage VGS 20 Continuous Drain Current ID 300 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 /W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250 A, VGS=0V 50 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=... See More ⇒

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