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View p1403ev8 detailed specification:

P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = -10V -30V - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -12 ID Continuous Drain Current2 TA = 70 C -10 A IDM -65 Pulsed Drain Current1 , 2 IAS Avalanche Current -39 EAS Avalanche Energy L = 0.1mH 89 mJ TA = 25 C 3 PD Power Dissipation W TA = 70 C 2 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 25 C / W Junction-to-Ambient RqJA 40 1 Pulse width limited by maximum junction temperature. 2 Limited only by maximum temperature allowed Ver 1.0 1 2012/4/13 P1403EV8 P-C... See More ⇒

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