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View pr804ba33 detailed specification:

PR804BA33 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.4m @VGS = 10V 30V 149A ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 149 TC = 100 C 94 ID Continuous Drain Current4 TA = 25 C 37 A TA= 70 C 29 IDM 200 Pulsed Drain Current1 IAS Avalanche Current 51 EAS Avalanche Energy L =0.1mH 130 mJ TC = 25 C 50 TC = 100 C 20 PD W Power Dissipation3 TA = 25 C 3.1 TA = 70 C 2 TJ, Tstg Operating Junction & Storage Temperature Range -55 to 150 C REV 1.0 1 2018/5/4 PR804BA33 N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS RqJA t 10s 40 Junction-to-Ambient2 Steady-State RqJA 60 C / W Junct... See More ⇒

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