All Transistors. Equivalents Search

View pz2n7002m detailed specification:

PZ2N7002M N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2 @VGS = 10V 60V 300mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 25 TC = 25 C 300 ID Continuous Drain Current mA TC = 100 C 190 IDM 1 A Pulsed Drain Current1 TC = 25 C 0.35 PD Power Dissipation W TC = 100 C 0.14 TJ, TSTG Operating Junction & Storage Temperature Range -40 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 350 C / W 1 Pulse width limited by maximum junction temperature. REV 1.2 1 2015/5/6 PZ2N7002M N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 pz2n7002m.pdf Design, MOSFET, Power

 pz2n7002m.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pz2n7002m.pdf Database, Innovation, IC, Electricity