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View irf840b detailed specification:

IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.85 - Low Input Capacitance (Ciss) Qg (max.) (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Configuration Single Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM) Ron x Qg D - Fast Switching TO-220AB Material categorization For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. G Exemptions may apply. S APPLICATIONS D G Consumer Electronics S - Displays (LCD or Plasma TV) N-Channel MOSFET Server and Telecom Power Supplies -... See More ⇒

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