All Transistors. Equivalents Search

View sihf18n50c detailed specification:

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipations Capability Compliant to RoHS Directive 2002/95/EC TO-220 TO-220 FULLPAK G S D S D S G G N-Channel MOSFET ORDERING INFORMATION Package TO-220 TO-220 FULLPAK Lead (Pb)-free SiHP18N50C-E3 SiHF18N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 TC = 25 C 18 Continuous Drain Current (TJ = 150 C)a VGS at 10 V ID TC = 100 C 11 A Pulsed Drain Currentb IDM 72 ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 sihf18n50c.pdf Design, MOSFET, Power

 sihf18n50c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sihf18n50c.pdf Database, Innovation, IC, Electricity