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View mmbt9015lt1 detailed specification:

RoHS MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current Ic=-100mA 2 Collector-Emiller Voltage VCE=-45V 1. 1.BASE 2.EMITTER 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage V VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current Ic -100 o Collector Dissipation Ta=25 C* PD mW 225 O Tj Junction Temperature 150 C O Tstg Storage Temperature -55 150 C o Electrical Characteristics (Ta=25 C) Parameter Symbol MIN. TYP. MAX. Unit Condition BVCBO -50 V IC=-100 A IE=0 Collector-Base Breakdown Voltage BVCEO -45 V IC=-1mA IB=0 Collector-Emitter Breakdown Voltage# BVEBO -5 V IE=-100 A IC=0 Emitter-Base Breakdown Voltage ICBO -50 nA Collector-B... See More ⇒

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