View 2sb772 2sd882 detailed specification:
2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc Collector Current(Pulse)(1) IB(Pulse) Adc Base Current -0.6 0.6 PD 1.0 W Total Cevice Disspation Ta=25 C PD 10 W Total Cevice Disspation Tc=25 C Tj 150 C Junction Temperature Storage, Temperture Tstg -55 to +150 C Device Marking 2SB772=B772 , 2SD882=D882 ELECTORICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collect-Emitter Breakdown Voltage (IC=-10/10 mAdc, IB=0) V(BR)CEO -30/30 - Vdc Collect-Base Breakdown Voltage (IC=-100/100 Adc, IE=0) V(BR)CBO -40/40 - Vdc ... See More ⇒
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