View 2sa1106 detailed specification:
2SA1106 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Collector Dissipation PC 100 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 150 C ELECTRICAL CHARACTERISTICS (Ta=25 C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-5 mA IE=0 -200 V Collector Emitter Breakdown Voltage BVCEO IC=-10 mA -140 V Emitter Base Breakdown Voltage BVEBO RBE= -6 V Collector Cutoff Current ICBO IE=-5mA IC=0 -0.1 mA Emitter Cutoff Current IEBO VCB=-100V IE=0 -0.1 mA *DC Curre... See More ⇒
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2sa1106.pdf Design, MOSFET, Power
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