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WFF20N60S WFF20N60S WFF20N60S WFF20N60S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol Parameter Value Units V Drain Source Voltage 600 V DSS Continuous Drain Current(@Tc=25 ) 20 I A D (@Tc=100 ) 13 I Drain Current Pulsed1) 60 A DM V Gate to Source Voltage 30 V GS E Single Pulse Avalanche Energy2) 700 mJ AS I Single Pulse Avalanche Current1) 20 A AR 1) E Repetitive Avalanche Energy 20.5 mJ AR Tota... See More ⇒

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 wff20n60s.pdf Design, MOSFET, Power

 wff20n60s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 wff20n60s.pdf Database, Innovation, IC, Electricity