All Transistors. Datasheet

 

View aok20s60 datasheet:

aok20s60aok20s60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOK20S60FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@T =25C 20I AD14T =100CI Drain Current-Single Pulsed 80 ADMP Total Dissipation 266 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.47/WRth(ch-a) Channel-to-ambient thermal resistance 4

 

Keywords - ALL TRANSISTORS DATASHEET

 aok20s60.pdf Design, MOSFET, Power

 aok20s60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 aok20s60.pdf Database, Innovation, IC, Electricity

 

 
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