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INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOK20S60FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@T =25C 20I AD14T =100CI Drain Current-Single Pulsed 80 ADMP Total Dissipation 266 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.47/WRth(ch-a) Channel-to-ambient thermal resistance 4

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 aok20s60.pdf Проектирование, MOSFET, Мощность

 aok20s60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aok20s60.pdf База данных, Инновации, ИМС, Транзисторы