All Transistors. Datasheet

 

View c945 to-92 datasheet:

c945_to-92c945_to-92

C945(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mWTJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 VCollector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 VEmitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 VCollector cut-off current ICBO VCB=60V, IE=0

 

Keywords - ALL TRANSISTORS DATASHEET

 c945 to-92.pdf Design, MOSFET, Power

 c945 to-92.pdf RoHS Compliant, Service, Triacs, Semiconductor

 c945 to-92.pdf Database, Innovation, IC, Electricity

 

 
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