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C945(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mWTJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 VCollector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 VEmitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 VCollector cut-off current ICBO VCB=60V, IE=0