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View f3l30r06w1e3 b11 datasheet:

f3l30r06w1e3_b11f3l30r06w1e3_b11

Technische Information / Technical InformationIGBT-ModuleF3L30R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar Applications USV-Systeme UPS SystemsElektrische Eigenschaften Electrical Features Niederinduktives Design Low inductive design Niedrige Schaltverluste Low Switching Losses Niedriges V Low VCEsat CEsatMechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O Substrate with Low Thermal Resistance2 3 2 3Widerstand Kompaktes Design Compact design

 

Keywords - ALL TRANSISTORS DATASHEET

 f3l30r06w1e3 b11.pdf Design, MOSFET, Power

 f3l30r06w1e3 b11.pdf RoHS Compliant, Service, Triacs, Semiconductor

 f3l30r06w1e3 b11.pdf Database, Innovation, IC, Electricity

 

 
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