View smbt3906 mmbt3906 datasheet:

SMBT3906/ MMBT3906PNP Silicon Switching Transistor3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: 2 SMBT3904/ MMBT3904 (NPN)1VPS05161Type Marking Pin Configuration PackageSMBT3906/ MMBT3906 s2A SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCEO40Collector-base voltage VCBO5Emitter-base voltage VEBO200 mACollector current IC330 mWTotal power dissipation- PtotTS = 71 C150 CJunction temperature TjStorage temperature Tstg -65 ... 150Thermal ResistanceParameter Symbol Value UnitK/WJunction - soldering point1) RthJS 2401For calculation of R please refer to Application Note Thermal ResistancethJAJul-28-20031SMBT3906/ MMBT3906Electrical Characteristics at TA = 25C, unless otherwise specifiedParame

Keywords - ALL TRANSISTORS DATASHEET

 smbt3906 mmbt3906.pdf Design, MOSFET, Power

 smbt3906 mmbt3906.pdf RoHS Compliant, Service, Triacs, Semiconductor

 smbt3906 mmbt3906.pdf Database, Innovation, IC, Electricity