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SMBT3906/ MMBT3906PNP Silicon Switching Transistor3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: 2 SMBT3904/ MMBT3904 (NPN)1VPS05161Type Marking Pin Configuration PackageSMBT3906/ MMBT3906 s2A SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCEO40Collector-base voltage VCBO5Emitter-base voltage VEBO200 mACollector current IC330 mWTotal power dissipation- PtotTS = 71 C150 CJunction temperature TjStorage temperature Tstg -65 ... 150Thermal ResistanceParameter Symbol Value UnitK/WJunction - soldering point1) RthJS 2401For calculation of R please refer to Application Note Thermal ResistancethJAJul-28-20031SMBT3906/ MMBT3906Electrical Characteristics at TA = 25C, unless otherwise specifiedParame