ntmfs4c06n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ntmfs4c06n.pdf Principales características:

NTMFS4C06N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V Compliant 30 V 69 A 6.0 mW @ 4.5 V Applications CPU Power Delivery DC-DC Converters D (5-8) MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 20.0 A S (1,2,3) Current RqJA TA = 80 C 14.9 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25 C PD 2.55 W RqJA (Note 1) Continuous Drain TA = 25 C ID 31.6 A MARKING Current RqJA 10 s DIAGRAM TA = 80 C 23.7 (Note 1) D