spd04n60s5 spu04n60s5.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

spd04n60s5 spu04n60s5.pdf Principales características:

SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 P-TO251. Q67040-S4228 SPD04N60S5 P-TO252. Q67040-S4202 04N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current ID TC = 25 C 4.5 TC = 100 C 2.8 9 Pulsed drain current, tp limited by Tjmax ID puls 130 mJ Avalanche energy, single pulse EAS ID = 3.4 A, VDD = 50 V EAR 0.4 Avalanche energy, repetitive tAR limited by Tjmax1) ID = 4.5 A, VDD = 50 V 4.5 A Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS V 20 VGS Gate source vol