2sc3356.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sc3356.pdf Principales características:

2SC3356 NPN Silicon Epitaxial Transistor Features Low noise and high gain. NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHz High power gain. MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHz hFE Classification Marking R25 Pb Rank S hFE 120 220 Lead-free SOT-23 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3.0 V Collector current (DC) IC 100 mA Total power dissipation Ptot 200 mW Junction temperature Tj 150 Storage temperature range Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =10V, IE =0mA 1.0 A Emitter cutoff current IEBO VEB =1.0 V, IC =0mA 1.0 A DC current gain * hFE VCE =10V, IC = 20 mA 50 120 250 2 Insertion power gain VCE =10V, IC =2