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ap20gt60sw.pdf Principales características:

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +20 V IC@TC=25 Collector Current 40 A IC@TC=100 Collector Current 20 A ICM Pulsed Collector Current1 160 A 1 IDM Collector to Emitter Diode Forward Current 40 A PD@TC=25 Maximum Power Dissipation 125 W o TSTG Storage Temperature Range -55 to 150 C o TJ Operating Junction Temperature Range 150 C o TL Maximum Lead Temp. for Soldering Purposes 300 C , 1/8" from case for 5 seconds . Notes 1. Pulse width limited by max. junction temperature . Thermal Data Symbol Pa

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 ap20gt60sw.pdf Design, MOSFET, Power

 ap20gt60sw.pdf RoHS Compliant, Service, Triacs, Semiconductor

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