ap25g45em.pdf datasheet:
AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 450 VVGEGate-Emitter Voltage 6 VIGEPPulsed Gate-Emitter Voltage 8 VICPPulsed Collector Current 150 APD@TC=251Maximum Power Dissipation 2.5 W TSTGStorage Temperature Range -55 to 150 TJOperating Junction Temperature Range -55 to 150 Electrical Characteristics@Tj=25oC(unless otherwise specified)Symbol Parameter Test Conditions Min. Typ. Max. UnitsVGE= 6V, VCE=0VIGES Gate-Emitter Leakage Current - - 10 uAVCE=450V, VGE=0VICES Collecto
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ap25g45em.pdf Design, MOSFET, Power
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