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apt11gp60bdqb.pdf Principales características:

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TYPICAL PERFORMANCE CURVES APT11GP60BDQB APT11GP60BDQB 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss SSOA rated Low Gate Charge G Ultrafast Tail Current shutoff E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11GP60BDQB UNIT VCES Collector-Emitter Voltage 600 Volts VGE Gate-Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25 C 41 IC2 Continuous Collector Current @ TC = 100 C 20 Amps 1 ICM Pulsed Collector Current @ TC = 150 C 45 Switching Safe Operating Area @ TJ = 150 C SSOA 45A @ 600V PD Watts Total Power Dissip

 

Keywords - ALL TRANSISTORS. Principales características

 apt11gp60bdqb.pdf Design, MOSFET, Power

 apt11gp60bdqb.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt11gp60bdqb.pdf Database, Innovation, IC, Electricity

 

 
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