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apt13gp120bdq1g.pdf Principales características:

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TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 600V, 10A Low Gate Charge 50 kHz operation @ 600V, 16A C Ultrafast Tail Current shutoff RBSOA Rated G E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Parameter UNIT Symbol APT13GP120BDQ1(G) VCES Collector-Emitter Voltage 1200 Volts VGE Gate-Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25 C 41 IC2 Continuous Collector Current @ TC = 110 C

 

Keywords - ALL TRANSISTORS. Principales características

 apt13gp120bdq1g.pdf Design, MOSFET, Power

 apt13gp120bdq1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt13gp120bdq1g.pdf Database, Innovation, IC, Electricity

 

 

 


 
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