apt20gf120kr.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

apt20gf120kr.pdf Principales características:

APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G C Low Forward Voltage Drop High Freq. Switching to 20KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT20GF120KR UNIT VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K ) 1200 Volts VEC Emitter-Collector Voltage 15 VGE Gate-Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25 C 32 IC2 Continuous Collector Current @ TC = 90 C 20 Amps 1 ICM1 Pulsed Collector Current @ TC = 25 C 64 1 ICM2 Pulsed Collector Current @ TC = 90 C 40 2