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2n5401n.pdf Principales características:

2n5401n2n5401n

2N5401N Semiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = -160V, VCEO = -160V Low collector saturation voltage VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55 Typ PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C040-000 1 4.20 4.40 13.50 14.50 2.14 Typ. 3.09 3.29 2N5401N Absolute Maximum Ratings (Ta=25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO -5 V Collector current IC -600 mA Collector power dissipation PC 400 mW

 

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