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2n4036.pdf Principales características:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR 2N4036 TO-39 General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 65 V Collector -Base Voltage VCBO 90 V Emitter Base Voltage VEBO 7.0 V Base Current IB 0.5 A Collector Current -Continuous IC 1.0 A Power Dissipation @ Tc=25 deg C PD 5.0 W Linear Derating Factor 28.6 mW/deg C Power Dissipation @ Ta=25 deg C PD 1.0 W Linear Derating Factor 5.72 mW/deg C Operating & Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range Lead Temperature 1/16" from Case TL 230 deg C for 10 Seconds Thermal Resistance Junction to Case Rth (j-c) 35 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltag

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