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2n5400.pdf Principales características:

2n54002n5400

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package C B E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 120 V Collector Base Voltage VCBO 130 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA Power Dissipation @ Ta=25 C PD 625 mW Derate Above 25 C 5.0 mw/ C Power Dissipation @ Tc=25 C PD 1.5 W Derate Above 25 C 12 mw/ C Operating And Storage Junction Tj, Tstg - 55 to +150 C Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 83.3 C/W Rth (j-a) Junction to Ambient in free air 200 C/W ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter Voltage *VCEO IC=1mA, IB=0 120 V

 

Keywords - ALL TRANSISTORS. Principales características

 2n5400.pdf Design, MOSFET, Power

 2n5400.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5400.pdf Database, Innovation, IC, Electricity

 

 
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