Todos los transistores

 

bc635 bc636 bc637 bc638 bc639 bc640.pdf Principales características:

bc635_bc636_bc637_bc638_bc639_bc640bc635_bc636_bc637_bc638_bc639_bc640

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCEO Collector Emitter Voltage 45 60 80 V VCBO Collector Base Voltage 45 60 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A Total Device Dissipation at Ta=25 C PD 800 mW Derate Above 25 C 6.4 mW/ C Total Device Dissipation at Ta=25 C **PD 1.0 W Total Device Dissipation at Tc=25 C PD 2.75 W Derate Above 25 C 22 mW/ C Operating And Storage Junction Tj, Tstg - 55 to +150 C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 45 C/W Rth

 

Keywords - ALL TRANSISTORS. Principales características

 bc635 bc636 bc637 bc638 bc639 bc640.pdf Design, MOSFET, Power

 bc635 bc636 bc637 bc638 bc639 bc640.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc635 bc636 bc637 bc638 bc639 bc640.pdf Database, Innovation, IC, Electricity

 

 
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