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2n3789 2n3790 2n3791 2n3792.pdf Principales características:

2n3789_2n3790_2n3791_2n37922n3789_2n3790_2n3791_2n3792

DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 10 A Base Current IB 4.0 A Power Dissipation PD 150 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance JC 1.17 C/W ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 2N3789 2N3790 2N3791 2N3792 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE= Rated VCEO, VEB=1.5V 1.0 1.0 mA ICEV VCE= Rated VCEO,

 

Keywords - ALL TRANSISTORS. Principales características

 2n3789 2n3790 2n3791 2n3792.pdf Design, MOSFET, Power

 2n3789 2n3790 2n3791 2n3792.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3789 2n3790 2n3791 2n3792.pdf Database, Innovation, IC, Electricity

 

 

 


 
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