cep6030l ceb6030l.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep6030l ceb6030l.pdf Principales características:

CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 52 A Drain Current-Pulsed a IDM 156 A Maximum Power Dissipation @ TC = 25 C 75 W PD - Derate above 25 C 0.5 W/ C Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 2 C/W Thermal Resistance, Junction-to-Ambient R JA 62.5 C/W 1998.Mar