Todos los transistores

 

2sc945lt1.pdf Principales características:

2sc945lt12sc945lt1

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic= 150mA * Collector-Emitter Voltage Vce= 50V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V PIN 1 2 3 Collector-Emitter Voltage Vceo 50 V STYLE Emitter-Base Voltage Vebo 5 NO.1 B E C Collector Current Ic 150 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage BVcbo 60 V Ic=100uA Ie=0 Collector-Emitter Breakdown Voltage BVceo 50 V Ic= 1mA Ib=0 Emitter-Base Breakdown Voltage BV

 

Keywords - ALL TRANSISTORS. Principales características

 2sc945lt1.pdf Design, MOSFET, Power

 2sc945lt1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc945lt1.pdf Database, Innovation, IC, Electricity

 

 

 


 
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