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mmbtsc3356.pdf Principales características:

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. 1.Base 2.Emitter 3.Collector HFE MARKING SOT-23 Plastic Package Q R23 R R24 S R25 O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current I 100 mA C Power Dissipation Ptot 200 mW O Junction Temperature T 150 C j O Storage Temperature Range T - 65 to + 150 C S O Characteristics (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit DC Current Gain at V = 10 V, I = 20 mA Current Gain Group Q hFE 50 - 100 - CE C R hFE 80 - 160 - S hFE 125 - 250 - Collector Cutoff Current ICBO - - 1 A at V = 10 V CB Emitter Cutoff Current

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