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hm4n60 hm4n60f.pdf Principales características:

HM4N60 / HM4N60F HM4N60 / HM4N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the 100% avalanche tested avalanche and commutation mode. These devices are well Improved dv/dt capability suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. D G TO-220 TO-220F G D S G D S S Absolute Maximum Ratings TC = 25 Cunless otherwise noted Symbol Parameter HM4N60

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