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mmbt2907a-l mmbt2907a-h.pdf Principales características:

mmbt2907a-l_mmbt2907a-hmmbt2907a-l_mmbt2907a-h

Jingdao Microelectronics co.LTD MMBT2907A MMBT2907A SOT-23 PNP TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -60 V 2.EMITTER 3.COLLECTOR Collector Emitter Voltage VCEO -60 V Emitter Base Voltage VEBO -5 V Collector Current Continuous IC -600 mA mW Total Device Dissipation PD 250 Thermal Resistance From Junction RthJA 500 /W To Ambient Operation Junction and Storage TJ,Tstg -55 +150 Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.) Parameter Symbol Test conditions Typ Max Unit Min V(BR)CBO IC =-10uA, IE = 0 Collector-base breakdown voltage -60 V V(BR)CEO Collector-em

 

Keywords - ALL TRANSISTORS. Principales características

 mmbt2907a-l mmbt2907a-h.pdf Design, MOSFET, Power

 mmbt2907a-l mmbt2907a-h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbt2907a-l mmbt2907a-h.pdf Database, Innovation, IC, Electricity

 

 
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