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2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf Principales características:

2sc3356s-b_2sc3356s-c_2sc3356s-d2sc3356s-b_2sc3356s-c_2sc3356s-d

2SC3356S NPN N RF TRA N SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise trans Silicon epitax process. xial bipolar p H gain, low no High power g oise figure, hi c range and ideal current characteris igh dynamic n stics, 2 SOT-23 chip package, mai p inly used in VHF, UHF and CATV hi cy wideband amplifier. igh frequenc d low noise a 1 SOT-23 1 Ba 2 Em 3 C ase mitter Collector Fea ature High 1e 2 V h gain S21 TYP. Value is 11.5dB @VCE=10V IC=20mA f=1GHz Low . V w noise NF TYP. Value is 1.3dB @VCE=10V IC=7mA f=1GHz fT (T TYP. Value is 7G @ VCE=10V IC=20mA f=1GHz TYP.) P GHz V Abs ings TA=25 Unless Otherw solute Maximum Rati wise noted PARAMETER SYMBLE MAXIM U R E MUM VALUE UNIT Coll breakdown vo VCBO 20 V lector-base b oltage Coll er breakdown VCEO 12 V lector-emitte n volt

 

Keywords - ALL TRANSISTORS. Principales características

 2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf Design, MOSFET, Power

 2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf Database, Innovation, IC, Electricity

 

 

 


 
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