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njw0281gt4tl.pdf Principales características:

njw0281gt4tlnjw0281gt4tl

NJW0281GT4TL DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0302G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Voltage 250 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 15 A C I Base Current-Continuous 1.5 A B Collector Power Dissipation P 150 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg Ordering Information Product Package Packaging NJW0281GT4TL TO-3PN Tube V01 1 www.sourcechips.com NJW0281GT4TL ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V Collector-Emitter Breakd

 

Keywords - ALL TRANSISTORS. Principales características

 njw0281gt4tl.pdf Design, MOSFET, Power

 njw0281gt4tl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 njw0281gt4tl.pdf Database, Innovation, IC, Electricity

 

 
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