sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf Principales características:
SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SI*30N60G21B Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N60G21B/SIP30N60G21B/SIW30N60G21B/ SIB30N60G21B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the super junction (SJ) IC 30 A technology. The SJ-IGBT series provides low VCE(sat) IC=30A 1.7 V switching losses, high energy efficiency and high avalanche ruggedness for motor control, solar application and welding machine, etc. Features High breakdown voltage to 600V for improved reliability Super junction Technology offering High speed switching High ruggedness, temperature stable SIF30N60G21B SIP30N60G21B Low VCE(sat) Easy parallel switching capability due to positive temperature coefficient in
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