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irf3410.pdf Principales características:

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IRF3410 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 40 Continuous Drain Current (TJ = 175 C) ID TC = 125 C 23 A IDM Pulsed Drain Current 120 IAR Avalanche Current 35 L = 0.1 mH EAR 61 mJ Repetitive Avalanche Energya TC = 25 C 107b PD Maximum Power Dissipationa W TA = 25 Cc 3.75 TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol L

 

Keywords - ALL TRANSISTORS. Principales características

 irf3410.pdf Design, MOSFET, Power

 irf3410.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3410.pdf Database, Innovation, IC, Electricity

 

 
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