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irf610p.pdf Principales características:

irf610pirf610p

IRF610P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 TC = 25 C 5.0 Continuous Drain Current VGS at 10 V ID TC = 100 C 4.0 A Pulsed Drain Currenta IDM 20 Linear Derating Factor 0.33 W/ C Linear Derating Factor (PCB Mount) e 0.020 Single Pulse Avalanche Energy b EAS 161 mJ Repetitive Avalanche Current a IAR 4.8 A Repetitive Avalanche Energy

 

Keywords - ALL TRANSISTORS. Principales características

 irf610p.pdf Design, MOSFET, Power

 irf610p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf610p.pdf Database, Innovation, IC, Electricity

 

 

 


 
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