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spu04n60c3.pdf Principales características:

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SPU04N60C3 www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS directive 2002/95/EC Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 Continuous Drain Currente TC = 25 C 4.5 VGS at 10 V ID Continuous Drain Current TC = 100 C 4.2 A Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.48 W/ C Single Pulse Avalanche Energyb EAS 325 mJ Repetitive Avalanche

 

Keywords - ALL TRANSISTORS. Principales características

 spu04n60c3.pdf Design, MOSFET, Power

 spu04n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spu04n60c3.pdf Database, Innovation, IC, Electricity

 

 

 


 
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