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ss8050b ss8050c ss8050d ss8050e.pdf Principales características:

Jiangsu Weida Semiconductor Co., Ltd. SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25 C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100 A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100 A, IC=0 Collectorcut-offcurrent A ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current A - - 0.1 I

Keywords - ALL TRANSISTORS. Principales características

 ss8050b ss8050c ss8050d ss8050e.pdf Design, MOSFET, Power

 ss8050b ss8050c ss8050d ss8050e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050b ss8050c ss8050d ss8050e.pdf Database, Innovation, IC, Electricity