25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf datasheet:

25N10/F25N10/I25N10/E25N10/B25N10/D25N1025A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 100VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 30mDS(on) TYP)RoHS standard.I = 25AD2 Features Fast Switching Low ON Resistance(Rdson36m) Low Gate Charge(Typical:61nC) Low Reverse Transfer Capacitances(Typical:84pF) 100% Single Pulse Avalanche Energy Test 100% VDS TestTO-220C TO-220F TO-2623 Applications Power switching applications LED Boost UPS power supply Load switchTO-263 TO-252B TO-251B4 Electrical Characteristics4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)ValueParameter Symbol Units25N10/I25N10/E25N10F25N10/B25N10/D25N10Maximum Drian-Source DC V