mmbt2907a-g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mmbt2907a-g.pdf Principales características:

General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) Collector 0.035(0.90) 3 0.089(2.25) 1 0.004(0.10) max Base 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 C unless otherwise noted) Parameter Symbol Value Units Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector current-continuous IC -600 mA Total device dissipation PD 250 mW Thermal resistance, junction to ambient R JA 500