mmbta92-g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mmbta92-g.pdf Principales características:

General Purpose Transistor MMBTA92-G (PNP) RoHS Device Features SOT-23 0.119(3.00) -High voltage transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25 C unless otherwise noted) Symbol Parameter Value Unit Collector-Base voltage VCBO -300 V Collector-Emitter voltage VCEO -300 V Emitter-Base voltage VEBO -5 V Collector current-Continuous IC -200 mA Collector current-pulsed ICM -500 mA Collector power dissipation PC 300 mW Thermal resistance, junction to ambient R JA 410 C/W Junction temperature TJ 150 C Storage temperature TSTG -55 to +150 C Electrical Characteristics